Avalanche breakdown timing statistics for silicon single photon avalanche diodes

Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S.J., Zhou, X. et al. (3 more authors) (2018) Avalanche breakdown timing statistics for silicon single photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24 (2). ISSN 1077-260X

Abstract

Metadata

Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/.

Keywords: Avalanche breakdown; avalanche photodiodes; impact ionization; jitter; silicon
Dates:
  • Accepted: 1 December 2017
  • Published (online): 4 December 2017
  • Published: March 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
SCIENCE AND TECHNOLOGY FACILITIES COUNCIL
ST/F50334X/1
SCIENCE AND TECHNOLOGY FACILITIES COUNCIL
ST/N000145/1
Depositing User: Symplectic Sheffield
Date Deposited: 03 Jan 2018 11:02
Last Modified: 21 Dec 2023 11:58
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JSTQE.2017.2779834
Related URLs:
Open Archives Initiative ID (OAI ID):

Export

Statistics