Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S.J., Zhou, X. et al. (3 more authors) (2018) Avalanche breakdown timing statistics for silicon single photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24 (2). ISSN 1077-260X
Abstract
CCBY Silicon-based Single Photon Avalanche Diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has however been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this work, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown and timing jitter. Our model inherently incorporates carriers & #x0027; dead space due to phonon scattering and allows for non-uniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p on n design. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef.data.4823248).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/. |
Keywords: | Avalanche breakdown; avalanche photodiodes; impact ionization; jitter; silicon |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number SCIENCE AND TECHNOLOGY FACILITIES COUNCIL ST/F50334X/1 SCIENCE AND TECHNOLOGY FACILITIES COUNCIL ST/N000145/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 Jan 2018 11:02 |
Last Modified: | 21 Dec 2023 11:58 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/JSTQE.2017.2779834 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:125653 |