Zhang, Kelvin H L, Wu, Rui, Tang, Fengzai et al. (8 more authors) (2017) Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions. ACS applied materials & interfaces. pp. 26549-26555. ISSN 1944-8252
Abstract
Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO3 (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10(3) but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2017 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details |
Keywords: | Journal Article |
Dates: |
|
Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 04 Dec 2017 16:20 |
Last Modified: | 16 Oct 2024 14:12 |
Published Version: | https://doi.org/10.1021/acsami.7b06025 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1021/acsami.7b06025 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:124831 |
Download
Filename: Electronic_structure_and_band_alignment_at_the_NiO_and_SrTiO3_p_n_heterojunctions.docx
Description: Electronic structure and_band alignment at the NiO and SrTiO3 p-n heterojunctions