Modelling the threshold voltage for p-channel E-mode GaN HFETs

Metadata

Item Type:	Article
Authors/Creators:	Kumar, A. https://orcid.org/0000-0002-8288-6401 De Souza, M.M.
Copyright, Publisher and Additional Information:	© Institution of Engineering and Technology. This is an author produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords:	gallium compounds; III-V semiconductors; wide band gap semiconductors; aluminium compounds; MOSFET; two-dimensional hole gas; technology CAD (electronics); threshold voltage modelling; p-channel enhancement-mode heterostructure field-effect transistor; p-channel metal-oxide-semiconductor heterostructure field-effect transistor; polarisation induced two-dimensional hole gas; depletion mode; TCAD simulation; AlGaN-GaN-AlGaN-GaN
Dates:	Published: April 2018 Published (online): 1 April 2018 Accepted: 30 October 2017
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	27 Nov 2017 15:11
Last Modified:	14 Dec 2023 12:43
Status:	Published
Publisher:	Institution of Engineering and Technology
Refereed:	Yes
Identification Number:	10.1049/iet-pel.2017.0438
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:124483

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