Wang, Junlin orcid.org/0000-0002-0383-7864, Zhang, Xichao, Lu, Xianyang et al. (6 more authors) (2017) Magnetic domain wall engineering in a nanoscale permalloy junction. Applied Physics Letters. 072401. 072401-1 072401-5. ISSN 0003-6951
Abstract
Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Author(s) |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York The University of York > Faculty of Sciences (York) > Electronic Engineering (York) The University of York > Faculty of Sciences (York) > Physics (York) The University of York > Faculty of Sciences (York) > Computer Science (York) |
Depositing User: | Pure (York) |
Date Deposited: | 10 Nov 2017 16:50 |
Last Modified: | 16 Oct 2024 14:11 |
Published Version: | https://doi.org/10.1063/1.4985662 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1063/1.4985662 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:123911 |
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Description: Magnetic domain wall engineering in a nanoscale permalloy junction
Licence: CC-BY 2.5