Design of a high-speed germanium-tin absorption modulator at mid-infrared wavelengths
Ponce, R, Sharif-Azadeh, S, Stange, D et al. (5 more authors)
(2017)
Design of a high-speed germanium-tin absorption modulator at mid-infrared wavelengths.
In:
IEEE 14th International Conference on Group IV Photonics (GFP 2017).
GFP 2017, 23-25 Aug 2017, Berlin, Germany.
, pp. 19-20.
ISBN 978-1-5090-6568-4
Abstract
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of the Franz-Keldysh-effect by confinement of the applied electric field to GeSn in a reverse-biased junction results in 3.2dB insertion losses, a 35GHz bandwidth and a 6dB extinction ratio for a 2Vpp drive signal.
Metadata
Item Type:
Proceedings Paper
Authors/Creators:
Ponce, R
Sharif-Azadeh, S
Stange, D
Merget, F
Marzban, B
Ikonic, Z
Buca, D
Witzens, J
Copyright, Publisher and Additional Information:
(c) 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords:
Modulation, Absorption, Photonics, Photonic band gap, Silicon, Optical refraction, Optical variables control
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