Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951

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Item Type: Article
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© 2016 AIP Publishing LLC. Reproduced in accordance with the publisher's self-archiving policy.

Dates:
  • Published: 15 February 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 13 Oct 2017 09:21
Last Modified: 13 Oct 2017 09:21
Published Version: https://doi.org/10.1063/1.4942093
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.4942093
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