Herling, F., Morrison, C., Knox, C.S. et al. (5 more authors) (2017) Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization. Physical Review B , 95 (15). 155307. ISSN 2469-9950
Abstract
We study the spin-orbit interaction (SOI) in InAs/GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | ©2017 American Physical Society. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Oct 2017 11:26 |
Last Modified: | 11 Oct 2017 11:29 |
Published Version: | https://doi.org/10.1103/PhysRevB.95.155307 |
Status: | Published |
Publisher: | American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevB.95.155307 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:122273 |