InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy

Abstract

In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 μm diameter and two randomly selected 400 μm diameter In 0.5 Ga 0.5 P p + -i-n + mesa photodiodes is reported; the i-layer of the p + -i-n + structure was 5 μm thick. At room temperature, and under illumination from an 55 Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 μm In 0.5 Ga 0.5 P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.

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Item Type:	Article
Authors/Creators:	Butera, S. Lioliou, G. Krysa, A.B. https://orcid.org/0000-0001-8320-7354 Barnett, A.M.
Copyright, Publisher and Additional Information:	This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Dates:	Published: 31 August 2017 Published (online): 31 August 2017 Accepted: 10 August 2017
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	06 Oct 2017 13:07
Last Modified:	06 Oct 2017 13:07
Published Version:	https://doi.org/10.1038/s41598-017-10502-y
Status:	Published
Publisher:	Nature Publishing Group
Refereed:	Yes
Identification Number:	10.1038/s41598-017-10502-y
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:122145

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InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy

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