Luo, P., Sweet, M. and Ekkanath Madathil, S. (2018) A snap-back free Shorted Anode Super-Junction TCIGBT. IET Power Electronics, 11 (4). pp. 654-659. ISSN 1755-4535
Abstract
A novel structure called the Shorted-Anod e Super-Junction Trench Clustered IGBT (SA-SJ-TCIGB T) is proposed and demonstrated through numerical simulations in 1.2-k V, Field-Stop technology. This device is based on the Super-Junction Trench Clustered IGBT (SJ-TCIGBT) concept. In the S A-SJ-TCIGBT structure, due to the introduction of a segmented n + -anode, the device can operate in both forward conducting m ode and freewheeling diode mode without any snap-ba ck in the current voltage characteristics. In comparison to t he SJ-TCIGBT structure, the proposed device shows s ignificant improvement in trade-off relationship between forwa rd voltage drop and switch off energy losses. Simu lation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effective ly reduced without any increase in the overshoot voltage. Detailed two dim ensional modelling of the structure shows that sign ificant amount of excess electrons are extracted through the shorted- anode structure during turn-off process.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2017 Institution of Engineering and Technology. This is an author produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | insulated gate bipolar transistors; anodes; power semiconductor switches; snap-back free TCIGBT; shorted-anode super-junction TCIGBT; shorted-anode super-junction trench clustered insulated gate bipolar transistor; field-stop technology; SA-SJ-TCIGBT structure; segmented n+-anode; forward conducting mode; freewheeling diode mode; current-voltage characteristics; forward voltage drop; switch off energy losses; switching energy losses; tail current; overshoot voltage; excess electrons; voltage 1.2 kV |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 29 Sep 2017 08:36 |
Last Modified: | 09 Nov 2023 15:30 |
Status: | Published |
Publisher: | Institution of Engineering and Technology |
Refereed: | Yes |
Identification Number: | 10.1049/iet-pel.2017.0407 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:121803 |