Butera, S., Whitaker, M.D.C., Krysa, A.B. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2017) Investigation of a temperature tolerant InGaP (GaInP) converter layer for a Ni-63 betavoltaic cell. Journal of Physics D: Applied Physics, 50. 345101. ISSN 0022-3727
Abstract
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range −20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at −20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion efficiency were also observed when the temperature was increased: at −20 °C, the open circuit voltage and the cell internal conversion efficiency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at −20 °C.
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Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | InGaP; betavoltaic; semiconductors |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 14 Sep 2017 14:45 |
Last Modified: | 14 Sep 2017 14:45 |
Published Version: | https://doi.org/10.1088/1361-6463/aa7bc5 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/aa7bc5 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:121179 |
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