Wu, Haokaifeng, Vallejo Fernandez, Gonzalo orcid.org/0000-0002-4826-1547 and Hirohata, Atsufumi orcid.org/0000-0001-9107-2330 (2017) Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures. Journal of Physics D: Applied Physics. 375001. ISSN 1361-6463
Abstract
80 nm thick polycrystalline Mn2VSi films have been deposited on silicon substrates with an 18 nm silver seed layer and a 3 nm aluminium capping layer using a sputtering system. The best quality film is obtained for 723 K growth. The Mn2VSi thin film is verified to be antiferromagnetic, where an exchange bias is found when a 3 nm ferromagnetic CoFe layer has been deposited on the top of the Mn2VSi layer. The exchange bias is measured to be 34 Oe at 100 K. The blocking and thermal activation temperature (TACT) of Mn2VSi is estimated to be below 100 K and within a range between 100 K and 448 K, respectively. These properties can be improved by substituting the constituent atoms with the other elements (e.g., Co and Al), suggesting a potential of Mn2VSi to be used as an antiferromagnet in a spintronic device.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 IOP Publishing Ltd |
Keywords: | Heusler alloy,exchange bias,hysteresis loop |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 24 Jul 2017 12:15 |
Last Modified: | 23 Jan 2025 00:11 |
Published Version: | https://doi.org/10.1088/1361-6463/aa80d5 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/aa80d5 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:119422 |