Orchard, J.R., Woodhead, C., Wu, J. et al. (6 more authors) (2017) Silicon-based single quantum dot emission in the telecoms C-band. ACS Photonics, 4 (7). pp. 1740-1746.
Abstract
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 American Chemical Society. This is an author-produced version of a paper subsequently published in ACS Photonics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | C-band; GaAsSb; III−V semiconductors; quantum dots; Si substrate; single-photon sources |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Jul 2017 10:43 |
Last Modified: | 18 Aug 2023 15:41 |
Status: | Published |
Publisher: | American Chemical Society |
Refereed: | Yes |
Identification Number: | 10.1021/acsphotonics.7b00276 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:118900 |