Zhou, X., Tan, C.H., Zhang, S. et al. (4 more authors) (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4. 170071. p. 170071.
Abstract
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K−1, among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Authors. Published by the Royal Society under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, provided the original author and source are credited. |
Keywords: | Al1−xGaxAs0.56Sb0.44; avalanche photodiode; temperature coefficient; avalanche breakdown |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 22 May 2017 14:47 |
Last Modified: | 27 Jan 2020 16:58 |
Published Version: | https://doi.org/10.1098/rsos.170071 |
Status: | Published |
Publisher: | The Royal Society |
Refereed: | Yes |
Identification Number: | 10.1098/rsos.170071 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:116678 |