Unni, V. and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2017) Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis. In: Japanese Journal of Applied Physics. 2016 International Conference on Solid State Devices and Materials (SSDM2016), 26/09/2016 - 29/09/2016, Tsukuba, Japan. Japan Society of Applied Physics
Abstract
This is the first report on the numerical analysis of the performance of nanoscale vertical superjunction structures based on impurity doping and an innovative approach that utilizes the polarisation properties inherent in III-V nitride semiconductors. Such nanoscale vertical polarisation super junction structures can be realized by employing a combination of epitaxial growth along the non-polar crystallographic axes of Wurtzite GaN and nanolithography-based processing techniques. Detailed numerical simulations clearly highlight the limitations of a doping based approach and the advantages of the proposed solution for breaking the unipolar one-dimensional material limits of GaN by orders of magnitude.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Japan Society of Applied Physics. This is an author produced version of a paper subsequently published in Japanese Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) UNSPECIFIED ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 04 May 2017 15:32 |
Last Modified: | 14 Feb 2018 01:39 |
Published Version: | https://doi.org/10.7567/JJAP.56.04CG02 |
Status: | Published |
Publisher: | Japan Society of Applied Physics |
Refereed: | Yes |
Identification Number: | 10.7567/JJAP.56.04CG02 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:115934 |