Kawai, H., Yagi, S., Hirata, S. et al. (7 more authors) (2017) Low cost high voltage GaN polarization superjunction field effect transistors. Physica Status Solidi (a), 214 (8). 1600834. ISSN 1862-6300
Abstract
A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and latest results of scaled-up PSJ-FETs from POWDEC KK, have also been discussed. The article also presents hard-switching characteristics of 400V-to-800V boost converter constructed using a PSJ-FET grown on sapphire substrate and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 Wiley-VCH Verlag. This is an author produced version of a paper subsequently published in physica status solidi (a). Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | 2DHG; superjunction; gallium nitride; low-cost production |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 29 Mar 2017 14:27 |
Last Modified: | 26 Jul 2023 15:40 |
Status: | Published |
Publisher: | Wiley |
Refereed: | Yes |
Identification Number: | 10.1002/pssa.201600834 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:114218 |