Buca, D, von den Driesch, N, Stange, D et al. (9 more authors) (2017) GeSn lasers for CMOS integration. In: Electron Devices Meeting (IEDM), 2016 IEEE International. IEEE International Electron Devices Meeting (IEDM), 03-07 Dec 2016, San Francisco, USA. IEEE , pp. 588-591. ISBN 978-1-5090-3902-9
Abstract
In search of a suitable CMOS compatible light source many routes and materials are under investigation. Si-based group IV (Si)GeSn alloys offer a tunable bandgap from indirect to direct, making them ideal candidates for on-chip photonics and nano-electronics. An overview of recent achievements in material growth and device developments will be given. Optically pumped waveguide and microdisk structures with different strain and various Sn concentrations provide direct evidence of gain in these alloys and the width of the emission wavelength range that can be covered. Towards the aim of electrically pumped lasers, a set of different homojunction light emitting diodes and more complex heterostructure SiGeSn/GeSn LEDs is presented. Detailed investigation of electroluminescence spectra indicate that GeSn/SiGeSn heterostructures will be advantageous for future laser fabrication.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016, IEEE. This is an author produced version of a paper published in Electron Devices Meeting (IEDM), 2016 IEEE International. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Uploaded in accordance with the publisher’s self-archiving policy. |
Keywords: | Light emitting diodes, Cavity resonators, Quantum well devices, Optical waveguides, Laser excitation, Waveguide lasers |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Funding Information: | Funder Grant number Royal Society IE131593 |
Depositing User: | Symplectic Publications |
Date Deposited: | 08 Mar 2017 10:03 |
Last Modified: | 16 Jan 2018 21:16 |
Published Version: | https://doi.org/10.1109/IEDM.2016.7838472 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/IEDM.2016.7838472 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:113233 |