Cheong, J.S., Baharuddin, A.N.A.P., Ng, J.S. et al. (2 more authors) (2017) Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164. pp. 28-31. ISSN 0927-0248
Abstract
The absorption coefficient of AlGaInP lattice-matched to GaAs, across the composition range from AlInP to GaInP has been obtained from photocurrent versus wavelength measurements on seven homo-junction AlGaInP PIN diode structures. Due to the sensitivity of the photocurrent measurement technique, values of absorption down to 100 cm−1 have been determined close to the band-gap. From these, the bandgaps in this material system were extracted across the composition range and these corroborate data in the literature that shows the band-gap becoming indirect when the aluminium content, x>0.48.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/). |
Keywords: | Absorption coefficient; Diffusion length; GaInP; AlGaInP; AlInP; Bandgap |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 24 Feb 2017 15:57 |
Last Modified: | 27 Jan 2020 14:10 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.solmat.2017.01.042 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:112667 |