Absorption coefficients in AlGaInP lattice-matched to GaAs

Abstract

The absorption coefficient of AlGaInP lattice-matched to GaAs, across the composition range from AlInP to GaInP has been obtained from photocurrent versus wavelength measurements on seven homo-junction AlGaInP PIN diode structures. Due to the sensitivity of the photocurrent measurement technique, values of absorption down to 100 cm−1 have been determined close to the band-gap. From these, the bandgaps in this material system were extracted across the composition range and these corroborate data in the literature that shows the band-gap becoming indirect when the aluminium content, x>0.48.

Metadata

Item Type:	Article
Authors/Creators:	Cheong, J.S. Baharuddin, A.N.A.P. Ng, J.S. Krysa, A.B. David, J.P.R.
Copyright, Publisher and Additional Information:	© 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/).
Keywords:	Absorption coefficient; Diffusion length; GaInP; AlGaInP; AlInP; Bandgap
Dates:	Accepted: 27 January 2017 Published (online): 10 February 2017 Published: 1 May 2017
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	24 Feb 2017 15:57
Last Modified:	27 Jan 2020 14:10
Status:	Published
Publisher:	Elsevier
Refereed:	Yes
Identification Number:	10.1016/j.solmat.2017.01.042
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:112667

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Absorption coefficients in AlGaInP lattice-matched to GaAs

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