Rockett, T.B.O., Richards, R.D., Gu, Y. et al. (4 more authors) (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. In: Journal of Crystal Growth. MBE 2016 - 19th International Conference on Molecular Beam Epitaxy, 04/09/2016 - 09/09/2016, Montpellier, France. Elsevier
Abstract
A systematic series of GaAsBi pin diodes was grown by MBE using different growth temperatures and Bi fluxes, to study the effect on the structural and opto-electronic properties of GaAsBi. The Bi contents of the diodes show both growth temperature and Bi flux dependences. The diodes grown at higher temperatures show evidence of long range inhomogeneity from X-ray diffraction (XRD) measurements, whereas samples of comparable Bi content grown at lower temperatures appear to have well defined, uniform GaAsBi regions. However, the high temperature grown diodes exhibit more intense photoluminescence (PL) and lower dark currents. The results suggest that growth temperature related defects have a greater influence on the dark current than bismuth related defects, and therefore GaAsBi devices should be grown at the highest temperature possible for the desired Bi content.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 Elsevier. This is an author produced version of a paper subsequently published in Journal of Crystal Growth. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/) |
Keywords: | A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting ternary compounds; B3. Heterojunction semiconductor devices; B3. Infrared devices |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Feb 2017 13:58 |
Last Modified: | 04 Feb 2018 01:38 |
Published Version: | https://doi.org/10.1016/j.jcrysgro.2017.02.004 |
Status: | Published online |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.jcrysgro.2017.02.004 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:112230 |