Von den Driesch, N, Stange, D, Wirths, S et al. (11 more authors) (2017) SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters. Small, 13 (16). 1603321. ISSN 1613-6810
Abstract
SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.6 µm. Temperature-dependent photoluminescence experiments indicate ternaries near the indirect-to-direct bandgap transition, proving their potential for ternary-based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain-relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Von den Driesch, N, Stange, D, Wirths, S et al. (2017) SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters. Small, which has been published in final form at https://doi.org/10.1002/smll.201603321. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | SiGeSn; group IV; heterostructures; light emitting diodes; silicon photonics |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 10 Feb 2017 10:34 |
Last Modified: | 25 Jan 2021 15:35 |
Published Version: | https://doi.org/10.1002/smll.201603321 |
Status: | Published |
Publisher: | Wiley |
Identification Number: | 10.1002/smll.201603321 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:112205 |