Chen, S., Li, W., Wu, J. et al. (9 more authors) (2016) Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics, 10. pp. 307-311. ISSN 1749-4885
Abstract
Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Macmillan Publishers Limited. This is an author produced version of a paper subsequently published in Nature Photonics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Quantum dots; Semiconductor lasers |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 16 Feb 2017 09:27 |
Last Modified: | 06 Nov 2017 10:25 |
Published Version: | https://doi.org/10.1038/nphoton.2016.21 |
Status: | Published |
Publisher: | Nature Publishing Group |
Refereed: | Yes |
Identification Number: | 10.1038/nphoton.2016.21 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:111812 |