Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248
Abstract
A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Elsevier. This is an author produced version of a paper subsequently published in Journal of Crystal Growth. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/) |
Keywords: | A1. Wet etching; A1. Semi-polar (11-22) GaN; A3. Molecular beam epitaxy; A3. Metalorganic chemical vapour deposition; B1. AlGaN/GaN; B3. Vertical Heterostructure Field Effect Transisto (VHFET) |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 21 Dec 2016 11:04 |
Last Modified: | 08 Dec 2017 01:38 |
Published Version: | https://doi.org/10.1016/j.jcrysgro.2016.12.025 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.jcrysgro.2016.12.025 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:109683 |