Wang, T. orcid.org/0000-0001-5976-4994 (2016) Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31 (9). 093003-093003. ISSN 0268-1242
Abstract
The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.
Metadata
Item Type: | Article |
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Authors/Creators: | |
Copyright, Publisher and Additional Information: | © 2016 IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | semipolar GaN; overgrowth; InGaN; LED |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ROYAL SOCIETY IE131699 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/M003132/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/L017024/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/M015181/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 19 Dec 2016 16:22 |
Last Modified: | 19 Dec 2016 16:22 |
Published Version: | http://doi.org/10.1088/0268-1242/31/9/093003 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/0268-1242/31/9/093003 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:109543 |