Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111):Co2FeSi0.5Al0.5/Ge(111)

Nedelkoski, Zlatko, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Glover, Stephanie E et al. (12 more authors) (2016) Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111):Co2FeSi0.5Al0.5/Ge(111). Scientific Reports. 37282. p. 37282. ISSN 2045-2322

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Item Type: Article
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© The Author(s) 2016

Dates:
  • Published: 21 November 2016
  • Accepted: 26 October 2016
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 24 Nov 2016 16:25
Last Modified: 21 Jan 2025 17:23
Published Version: https://doi.org/10.1038/srep37282
Status: Published
Refereed: Yes
Identification Number: 10.1038/srep37282
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