Kesaria, M., de la Mare, M. and Krier, A. (2016) Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics, 49 (43). p. 435107. ISSN 0022-3727
Abstract
Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e1–hh1) and electron–light hole (e1–lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D * = 1.25 × 109 cm Hz1/2 W−1.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | dilute nitride; InAsSbN; MBE; photodiodes |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Nov 2016 13:58 |
Last Modified: | 15 Nov 2016 13:58 |
Published Version: | http://dx.doi.org/10.1088/0022-3727/49/43/435107 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/0022-3727/49/43/435107 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:107414 |