Baltynov, T., Unni, V. and Narayanan, E.M.S. (2016) The world’s first high voltage GaN-on-Diamond power semiconductor devices. Solid-State Electronics, 125. pp. 111-117. ISSN 0038-1101
Abstract
This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Elsevier |
Keywords: | AlGaN/GaN HEMT; GaN-on-Diamond; Circular HEMT; Breakdown voltage; Capacitance-voltage |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Nov 2016 14:20 |
Last Modified: | 19 Jul 2017 13:28 |
Published Version: | http://doi.org/10.1016/j.sse.2016.07.022 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.sse.2016.07.022 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:107228 |