Rainko, D, Stange, D, Von den Driesch, N et al. (8 more authors) (2016) (Si)GeSn nanostructures for light emitters. In: Vivien, L, Pavesi, L and Pelli, S, (eds.) Proceedings of SPIE. Silicon Photonics and Photonic Integrated Circuits V, 03-07 Apr 2016, Brussels, Belgium. Society of Photo-optical Instrumentation Engineers (SPIE) ISBN 9781510601369
Abstract
Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group IV photonic devices. The major goal here is the realization of fully integrated group IV room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si)Ge(Sn) heterostructures, ranging from GeSn/Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Uploaded in accordance with the publisher's self-archiving policy. |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 09 Nov 2016 12:19 |
Last Modified: | 22 Jan 2018 13:13 |
Published Version: | https://doi.org/10.1117/12.2227573 |
Status: | Published |
Publisher: | Society of Photo-optical Instrumentation Engineers (SPIE) |
Identification Number: | 10.1117/12.2227573 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:107196 |