Wirths, S, Geiger, R, Schulte-Braucks, C et al. (9 more authors) (2016) Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform. In: Technical Digest - International Electron Devices Meeting, IEDM. Electron Devices Meeting (IEDM), 2015 IEEE International, 07-09 Dec 2015, Hilton Washington, Washington DC, USA. IEEE , 2.6.1-2.6.4. ISBN 9781467398930
Abstract
We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 μm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
Metadata
Item Type: | Proceedings Paper |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works |
Keywords: | Photonic band gap, Strain, Lasers, Optical device fabrication, Optical resonators, Cavity resonators, Temperature measurement |
Dates: |
|
Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 15 Nov 2016 16:00 |
Last Modified: | 20 Jan 2018 06:27 |
Published Version: | https://doi.org/10.1109/IEDM.2015.7409615 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/IEDM.2015.7409615 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106910 |