The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO<inf>3</inf> thin films

Abstract

© 2016 The AuthorsThin films were deposited on Pt/Ti/SiO2/Si substrates using pulsed laser deposition from a target with a composition (Bi0.825Nd0.175Fe0.97Ti0.03O3) with 5 mol% excess Bi2O3 within the antiferroelectric (AFE) region of the NdFeO3-BiFeO3 phase diagram. However, Raman spectroscopy and transmission electron microscopy (TEM) revealed that films consisted of a mosaic microstructure in which (AFE), ferroelectric (FE) and paraelectric (PE) phases coexisted. Variation in the spatial distribution of Nd is typically greater in bulk ceramics than in thin films and therefore, the absence of single phase AFE cannot be attributed to local changes in composition. Instead, it is proposed that clamping due to mismatch in thermal expansion coefficient with the substrate suppresses the large volume change associated with the PE-FE and PE-AFE transition in bulk and its absence in the thin film prevents an avalanche-like transition throughout grains, which in bulk sustains single phase AFE, irrespective of local deviations in the Nd concentration.

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Item Type:	Article
Authors/Creators:	Zhang, H.R. Kalantari, K. Marincel, D.M. Trolier-McKinstry, S. MacLaren, I. Ramasse, Q.M. Rainforth, W.M. https://orcid.org/0000-0003-3898-0318 Reaney, I.M. https://orcid.org/0000-0003-3893-6544
Copyright, Publisher and Additional Information:	© 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords:	Antiferroelectric; Phase transition; Multiferroic; Transmission electron microscopy; X-ray diffraction
Dates:	Published: 4 October 2016 Published (online): 4 October 2016 Accepted: 3 October 2016
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	03 Nov 2016 16:46
Last Modified:	03 Nov 2016 16:46
Published Version:	https://doi.org/10.1016/j.tsf.2016.10.004
Status:	Published
Publisher:	Elsevier
Refereed:	Yes
Identification Number:	10.1016/j.tsf.2016.10.004
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:106897

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The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO<inf>3</inf> thin films

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