Richards, R.D. orcid.org/0000-0001-7043-8372, Hunter, C.J., Bastiman, F. et al. (2 more authors) (2016) Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. IET Optoelectronics http://dx.doi.org/10.1049/iet-opt.2015.0051, 10 (2). Institution of Engineering and Technology , pp. 34-38.
Abstract
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm − 2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IET. This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
Keywords: | X-ray diffraction; current density; electroluminescence; gallium arsenide; gallium compounds; III-V semiconductors; light emitting diodes; localised states |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number CENTRE FOR INTERGRATED PHOTONICS LTD UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 01 Nov 2016 14:37 |
Last Modified: | 01 Nov 2016 14:37 |
Status: | Published |
Publisher: | Institution of Engineering and Technology |
Series Name: | http://dx.doi.org/10.1049/iet-opt.2015.0051 |
Refereed: | Yes |
Identification Number: | 10.1049/iet-opt.2015.0051 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106572 |