Balanta, M.A.G., Kopaczek, J., Orsi Gordo, V. et al. (8 more authors) (2016) Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells. Journal of Physics D: Applied Physics, 49 (35). ISSN 0022-3727
Abstract
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observed at higher temperatures and higher laser intensities, which was associated to a sign inversion of hole effective mass in these structures. In addition, an enhancement of the polarization degree with decreasing of laser intensity was observed (experimental condition where the emission is dominated by localized excitons). This effect was explained by changes of spin relaxation and exciton recombination times due to exciton localization by disorder.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Journal of Physics D: Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 02 Nov 2016 15:00 |
Last Modified: | 10 Aug 2017 17:21 |
Published Version: | http://dx.doi.org/10.1088/0022-3727/49/35/355104 |
Status: | Published |
Publisher: | Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1088/0022-3727/49/35/355104 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106571 |