Grier, A, Valavanis, A, Edmunds, C et al. (8 more authors) (2016) Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects. In: 2016 IEEE Photonics Society Summer Topical Meeting Series. 2016 IEEE Photonics Society Summer Topical Meeting (SUM 2016), 11-13 Jul 2016, Newport Beach, CA, USA. IEEE , pp. 90-91. ISBN 9781509019007
Abstract
We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Keywords: | Quantum cascade lasers; Optoelectronic devices; Aluminum gallium nitride; Wide band gap semiconductors; Resonant tunneling devices; Performance evaluation |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 26 Oct 2016 09:59 |
Last Modified: | 15 Jan 2018 17:39 |
Published Version: | https://doi.org/10.1109/PHOSST.2016.7548743 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/PHOSST.2016.7548743 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106549 |