Ikonić, Z (2016) Electronic structure of (Si)GeSn and its tuning via incorporation of carbon. In: 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. 2016 IEEE Photonics Society Summer Topical Meeting (SUM 2016), 11-13 Jul 2016, Newport Beach, CA, USA. IEEE , pp. 55-56. ISBN 9781509019007
Abstract
The electronic band structure, and in particular the band gap directness, of binary and ternary SiGeSn alloys are first reviewed, and different aspects of their optoelectronic and microelectronic applications discussed, and the computational analysis is then extended to the dilute carbon-containing alloys.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Keywords: | Metals; Photonic band gap; Photonics; Carbon; Silicon; Lasers; Strain |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 26 Oct 2016 09:48 |
Last Modified: | 21 Jan 2018 08:31 |
Published Version: | https://doi.org/10.1109/PHOSST.2016.7548544 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/PHOSST.2016.7548544 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106548 |