Santos, L.F.D., Gobato, Y.G., Teodoro, M.D. et al. (8 more authors) (2011) Circular polarization in a non-magnetic resonant tunneling device. Nanoscale Research Letters, 6. 101. ISSN 1931-7573
Abstract
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2011 dos Santos et al; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 26 Oct 2016 08:45 |
Last Modified: | 26 Oct 2016 08:50 |
Published Version: | http://dx.doi.org/10.1186/1556-276X-6-101 |
Status: | Published |
Publisher: | SpringerOpen |
Refereed: | Yes |
Identification Number: | 10.1186/1556-276X-6-101 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:106336 |