Butera, S., Lioliou, G., Krysa, A.B. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2016) Temperature dependence of an AlInP 63Ni betavoltaic cell. Journal of Applied Physics, 120 (14). 144501. ISSN 0021-8979
Abstract
In this paper, the performance of an Al0.52In0.48P 63 Ni radioisotope cell is reported over the temperature range of −20 °C to 140 °C. A 400 μm diameter p+-i-n+ (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.52 V and 0.28 pW, respectively, were measured.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 AIP Publishing. This is an author produced version of a paper subsequently published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Al0.52In0.48P; betavoltaic; semiconductors; photodiode |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 14 Oct 2016 15:45 |
Last Modified: | 22 Mar 2018 13:06 |
Published Version: | https://dx.doi.org/10.1063/1.4964504 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.4964504 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:105905 |