Nedelkoski, Z., Kepaptsoglou, D. orcid.org/0000-0003-0499-0470, Ghasemi, A. et al. (7 more authors) (2016) Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si. Journal of physics : Condensed matter. 395003. pp. 1-6. ISSN 1361-648X
Abstract
textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IOP Publishing Ltd |
Keywords: | Heusler alloys,half-metals,spin-injection,spintronics |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 22 Sep 2016 08:17 |
Last Modified: | 14 Jan 2025 00:07 |
Published Version: | https://doi.org/10.1088/0953-8984/28/39/395003 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/0953-8984/28/39/395003 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:105095 |