Tang, M., Chen, S., Wu, J. et al. (7 more authors) (2016) Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates. IEEE Journal of Selected Topics in Quantum Electronics, 22 (6). 1900207. ISSN 1077-260X
Abstract
III-V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III-V and Si generates a high density of threading dislocations (TDs) at the interface between III-V and Si. Some of these TD will propagate into the III-V active region and lead to device degradation. By introducing defect filter layers (DFLs), the density of TDs propagating into the III-V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 16 Sep 2016 14:05 |
Last Modified: | 16 Sep 2016 14:05 |
Published Version: | http://dx.doi.org/10.1109/JSTQE.2016.2551941 |
Status: | Published |
Publisher: | IEEE |
Refereed: | Yes |
Identification Number: | 10.1109/JSTQE.2016.2551941 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:104765 |