Krysa, A.B. orcid.org/0000-0001-8320-7354, Roberts, J.S., Devenson, J. et al. (4 more authors) (2016) InAsP/AlGaInP/GaAs QD laser operating at ∼770 nm. In: Journal of Physics: Conference Series. V International Symposium on Coherent Optical Radiation of Semiconductor Compounds and Structures, 23-26 Nov 2015, Moscow, Russia. IOP Publishing: Conference Series
Abstract
We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots in AlGaInP/GaAs for application in laser diodes. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of arsenic in InAsP QDs was estimated to be ~25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to ~775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 µm wide InAsP QD lasers operated in a pulsed regime at room temperature at ~770 nm with a threshold current density of 155 A/cm and a maximum output optical power of at least 200 mW. The maximum operation temperature was at least 380 K.
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Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Sep 2016 08:42 |
Last Modified: | 15 Sep 2016 08:42 |
Published Version: | http://dx.doi.org/10.1088/1742-6596/740/1/012008 |
Status: | Published |
Publisher: | IOP Publishing: Conference Series |
Refereed: | Yes |
Identification Number: | 10.1088/1742-6596/740/1/012008 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:104711 |
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