Ramsay, A.J., Gopal, A., Gauger, E.M. et al. (4 more authors) (2010) Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots. Physical Review Letters , 104 (1). Art no.017402. ISSN 0031-9007
Abstract
We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2010 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review Letter. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Depositing User: | Miss Anthea Tucker |
Date Deposited: | 23 Feb 2010 11:07 |
Last Modified: | 08 Feb 2013 16:59 |
Published Version: | http://dx.doi.org/10.1103/PhysRevLett.104.017402 |
Status: | Published |
Publisher: | American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevLett.104.017402 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:10431 |