Ghasemi, A, Kepaptsoglou, D, Collins-McIntyre, L J et al. (3 more authors) (2016) Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films. Scientific Reports. 26549. ISSN 2045-2322
Abstract
We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Dates: |
|
Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 25 Jul 2016 11:17 |
Last Modified: | 05 Dec 2024 00:13 |
Published Version: | https://doi.org/10.1038/srep26549 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1038/srep26549 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:102881 |