Rimkus, A, Pozingyte, E, Nedzinskas, R et al. (5 more authors) (2016) Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures. Optical and Quantum Electronics, 48 (3). UNSP 202. ISSN 0306-8919
Abstract
Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are investigated. Modulated reflectance and photoluminescence spectroscopy is used to probe the QD- and QW-related interband optical transitions over the temperature range of 3–300 K. The observed spectral features in QDs are identified using numerical calculations in a framework of 8-band k⋅p k⋅p method. It is found that covering the dots by a 5 nm-thick InGaAs layer yields the energy red-shift of ground-state transition by ∼150 meV ∼150 meV . Moreover, the analysis of interband transition energy dependence on temperature using Varshni expression shows that material composition of InAs QDs significantly changes due to Ga/In interdiffusion. A comparison of emission- and absorption-type spectroscopy applied for InAs–GaAs QDs indicates a Stokes shift of ∼0.02 meV ∼0.02 meV above 150 K temperature.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016, Springer Science+Business Media. This is an author produced version of a paper published in Optical and Quantum Electronics. Uploaded in accordance with the publisher's self-archiving policy. The final publication is available at Springer via http://doi.org/10.1007/s11082-016-0446-9. |
Keywords: | InAs quantum dots; Modulated reflectance; Photoluminescence; Optical transitions; Electronic structure |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 28 Oct 2016 12:33 |
Last Modified: | 14 Apr 2017 02:45 |
Published Version: | http://doi.org/10.1007/s11082-016-0446-9 |
Status: | Published |
Publisher: | Springer Verlag |
Identification Number: | 10.1007/s11082-016-0446-9 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:101722 |