Spin injection in n-type resonant tunneling diodes

Abstract

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X− ). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

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Item Type:	Article
Authors/Creators:	Gordo, V.O. Herval, L.K.S. Galeti, H.V.A. Gobato, Y.G. Brasil, M.J.S.P. Marques, G.E. Henini, M. Airey, R.J. https://orcid.org/0000-0003-4631-434X
Copyright, Publisher and Additional Information:	© 2012 Orsi Gordo et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Keywords:	Spintronics; nanostructure; resonant tunneling diode; photoluminescence
Dates:	Published: 25 October 2012
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	09 Aug 2016 11:49
Last Modified:	09 Aug 2016 11:49
Published Version:	http://dx.doi.org/10.1186/1556-276X-7-592
Status:	Published
Publisher:	SpringerOpen
Refereed:	Yes
Identification Number:	10.1186/1556-276X-7-592
Related URLs:	Author
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:100356

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Spin injection in n-type resonant tunneling diodes

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