Excitonic light emission decay time measurements in moderately δ-doped GaAs/AlAs multiple quantum wells

The radiative recombination rate of moderately doped n-type and p-type GaAs/AlAs multiple quantum wells using a timecorrelated single photon counting system is presented. The experimental study has been obtained within a wide temperature range from liquid helium to room temperature and the work has focused on identifying photoluminescence decay rates based on freeexciton recombinations. It was found that the free exciton decay time was reduced in doped multiple GaAs/AlAs quantum wells, and that the reduction rate depends on both the concentration and doping type.