Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

von den Driesch, N, Stange, D, Wirths, S et al. (8 more authors) (2016) Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si. In: Proceedings of SPIE. SPIE Photonics West - OPTO, Silicon Photonics XI (Conference 9752), 15-17 Feb 2016, San Francisco, California, USA. Society of Photo-optical Instrumentation Engineers (SPIE) .

Abstract

Metadata

Authors/Creators:
  • von den Driesch, N
  • Stange, D
  • Wirths, S
  • Rainko, D
  • Mussler, G
  • Stoica, T
  • Ikonic, Z
  • Hartmann, JM
  • Grutzmacher, D
  • Mantl, S
  • Buca, D
Copyright, Publisher and Additional Information: Copyright 2016 Society of Photo Optical Instrumentation Engineers. This is an author produced version of a paper published in Proceedings of SPIE . Uploaded in accordance with the publisher's self-archiving policy. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Keywords: GeSn, Direct bandgap, Optoelectronics, Light emitting diodes, Multi quantum wells, Silicon photonics
Dates:
  • Published: 10 March 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Funding Information:
FunderGrant number
Royal SocietyIE131593
Depositing User: Symplectic Publications
Date Deposited: 18 Oct 2016 10:56
Last Modified: 17 Jan 2018 03:22
Published Version: http://dx.doi.org/10.1117/12.2211641
Status: Published
Publisher: Society of Photo-optical Instrumentation Engineers (SPIE)
Identification Number: https://doi.org/10.1117/12.2211641

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