Dual-Gated Topological Insulator Thin-Film Device for Efficient Fermi-Level Tuning

Yang, F, Taskin, AA, Sasaki, S orcid.org/0000-0002-8915-6735 et al. (4 more authors) (2015) Dual-Gated Topological Insulator Thin-Film Device for Efficient Fermi-Level Tuning. ACS Nano, 9 (4). pp. 4050-4055. ISSN 1936-0851

Abstract

Metadata

Authors/Creators:
Keywords: (Bi₁–ₓSbₓ)₂Te₃; Dirac fermion; electrostatic gating; MBE; topological insulator
Dates:
  • Published: 8 April 2015
  • Accepted: 8 April 2015
  • Published (online): 8 April 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds) > Condensed Matter (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 04 Oct 2016 14:42
Last Modified: 04 Oct 2016 14:42
Published Version: http://dx.doi.org/10.1021/acsnano.5b00102
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acsnano.5b00102
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