Quilter, J.H., Brash, A.J., Liu, F. et al. (6 more authors) (2015) Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation. Physical Review Letters (PRL). ISSN 0031-9007
Abstract
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assisted relaxation. A maximum exciton population of 0.67±0.06 is measured for a laser tuned 0.83 meV to higher energy. Furthermore, the phonon sideband is mapped using a two-color pump-probe technique, with its spectral form and magnitude in very good agreement with the result of path-integral calculations.
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Copyright, Publisher and Additional Information: | This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. | ||||
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) | ||||
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 20 Apr 2016 10:50 | ||||
Last Modified: | 22 Mar 2018 18:53 | ||||
Published Version: | http://dx.doi.org/10.1103/PhysRevLett.114.137401 | ||||
Status: | Published | ||||
Publisher: | American Physical Society | ||||
Identification Number: | https://doi.org/10.1103/PhysRevLett.114.137401 | ||||
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