Zhou, X., Ng, J.S. and Tan, C.H. (2015) In As photodiode for low temperature sensing. In: Meynart, R., Neeck, S.P. and Shimoda, H., (eds.) SPIE Proceedings. Sensors, Systems, and Next-Generation Satellites XIX, September 21, 2015, Toulouse, France. SPIE , Bellingham .
Abstract
We report on the evaluation of InAs photodiodes and their potential for low temperature sensing. InAs n-i-p photodiodes were grown and analyzed in this work. Radiation thermometry measurements were performed at reference blackbody temperatures of 37 to 80°C to determine photocurrent and temperature error. The uncooled InAs photodiodes, with a cutoff wavelength of 3.55 μm, detect a target temperature above 37°C with a temperature error of less than 0.46°C. When the photodiode was cooled to 200 K, the temperature error at 37°C improves by 10 times from 0.46 to 0.048°C, suggesting the potential of using InAs for human temperature sensing. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Metadata
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Copyright, Publisher and Additional Information: | © 2015 SPIE. Reproduced in accordance with the publisher's self-archiving policy. | ||||||
Keywords: | Radiation thermometry; temperature measurement; InAs photodiodes | ||||||
Dates: |
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Institution: | The University of Sheffield | ||||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||||
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Depositing User: | Symplectic Sheffield | ||||||
Date Deposited: | 18 May 2016 09:14 | ||||||
Last Modified: | 18 May 2016 09:23 | ||||||
Published Version: | http://dx.doi.org/10.1117/12.2197343 | ||||||
Status: | Published | ||||||
Publisher: | SPIE | ||||||
Refereed: | Yes | ||||||
Identification Number: | https://doi.org/10.1117/12.2197343 | ||||||
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