Hatem, O, Freeman, JR, Cunningham, JE et al. (5 more authors) (2016) Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation. Journal of Infrared, Millimeter and Terahertz Waves, 37 (5). pp. 415-425. ISSN 1866-6892
Abstract
We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe-doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD). Compared to our previous studies of Fe-doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 kΩ cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe-doping concentration (between 1E16 and 1.5E17 cm−3) on optical light absorption (between 800 and 1600 nm), on resistivity, and on THz emission is also discussed.
Metadata
Authors/Creators: |
|
||||||||
---|---|---|---|---|---|---|---|---|---|
Copyright, Publisher and Additional Information: | (c) The Author(s) 2015. This Open Access article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. | ||||||||
Keywords: | Terahertz waves; Photo-emission; Photoconductive switches; Fe:InGaAsP; Fe:InGaAs; MOCVD | ||||||||
Dates: |
|
||||||||
Institution: | The University of Leeds | ||||||||
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) | ||||||||
Funding Information: |
|
||||||||
Depositing User: | Symplectic Publications | ||||||||
Date Deposited: | 18 Jan 2016 15:10 | ||||||||
Last Modified: | 12 Feb 2019 13:08 | ||||||||
Published Version: | http://dx.doi.org/10.1007/s10762-015-0231-z | ||||||||
Status: | Published | ||||||||
Publisher: | Springer Verlag | ||||||||
Identification Number: | https://doi.org/10.1007/s10762-015-0231-z |