InAs avalanche photodiodes as X-ray detectors

We designed and demonstrated an InAs avalanche photodiode (APD) for X-ray detection, combining narrow band gap semiconductor materials and avalanche gain from APDs. The InAs APD (cooled by liquid nitrogen) was tested with a 55Fe X-ray source. Full width at half maximum (FWHM) from the spectra decreases rapidly with reverse bias, rising again for higher voltages, resulting in a minimum FWHM value of 401 eV at 5.9 keV. This minimum value was achieved at 10 V reverse bias, which corresponds to an avalanche gain of 11. The dependence of FWHM on reverse bias observed is explained by the competition between various factors, such as leakage current, capacitance and avalanche gain from the APD, as well as measurement system noise. The minimum FWHM achieved is largely dominated by the measurement system noise and APD leakage current.