Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

Tan, C.H., David, J.P.R., Plimmer, S.A. et al. (3 more authors) (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383



  • Tan, C.H.
  • David, J.P.R.
  • Plimmer, S.A.
  • Rees, G.J.
  • Tozer, R.C.
  • Grey, R.
Copyright, Publisher and Additional Information: Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Al0.6Ga0.4As, avalanche photodiodes, excess noise, impact ionization
  • Published: July 2001
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 06 Jun 2014 02:48
Published Version: http://dx.doi.org/10.1109/16.930644
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/16.930644