Origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures

Sills, A and Califano, M (2015) Origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures. Physical Chemistry Chemical Physics, 17 (4). 2573 - 2581. ISSN 1463-9076

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Authors/Creators:
  • Sills, A
  • Califano, M
Copyright, Publisher and Additional Information: © 2015, the Authors. This is an author produced version of a paper published in Physical Chemistry Chemical Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 January 2015
  • Accepted: 3 December 2014
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 19 Oct 2015 10:20
Last Modified: 11 Apr 2017 22:10
Published Version: http://dx.doi.org/10.1039/c4cp03706e
Status: Published
Publisher: Royal Society of Chemistry
Identification Number: https://doi.org/10.1039/c4cp03706e
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